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Higher power electronic components allow automotive system designers to meet higher mandatory automotive fuel efficiency standards while meeting stringent overall emissions requirements. To meet these standards, power MOSFETs with a current capability of more than 200 amps and an on-resistance of less than 1 milliohm must be used to reduce transmission losses and improve overall efficiency. To date, the automotive market has not yet introduced MOSFETs that meet these requirements.
In addition, the H-PSOF package is smaller in size and height than the standard D2PAK package (TO-263) commonly used in automotive applications of the same type. The area of ​​the H-PSOF package is about 20% smaller than the current D2PAK, and the height is almost half that of the D2PAK.
Infineon Technologies AG has recently introduced an innovative packaging technology that will bring greater current carrying capacity and higher efficiency to demanding automotive electronics applications such as pure electric vehicles and hybrid vehicles. The newly introduced TO package complies with the JEDEC standard H-PSOF (heat-dissipating plastic small outline flat lead). The first products introduced with H-PSOF packaging technology are 40V OptiMOS T2 power transistors, which have a drain current of up to 300 amps and an on-resistance as low as 0.76 milliohms.